MIE-304G1, MIE-304H4, MIE-324A2 Selling Leads, Datasheet
D/C:07+
MIE-304G1, MIE-304H4, MIE-324A2 Datasheet download
Part Number: MIE-304G1
MFG: --
Package Cooled:
D/C: 07+
MIE-304G1, MIE-304H4, MIE-324A2
- Table of contents:
Info of MIE-304G1
Info of MIE-304H4
Info of MIE-324A2
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About MIE-304G1
PDF/DataSheet Download
Datasheet: MIE-304G1
File Size: 32401 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
About MIE-304H4
PDF/DataSheet Download
Datasheet: MIE-304H4
File Size: 32803 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
About MIE-324A2
PDF/DataSheet Download
Datasheet: MIE-324A2
File Size: 33648 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
MIE-304G1 General Description
The MIE-304G1 is an infrared emitting diode in GaAs technology molded in water clear plastic package.
MIE-304G1 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-304G1 Features
` Standard T-1 ( 3mm ) package, radiation angle : ±10°
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
MIE-304H4 General Description
The MIE-304H4 is a GaAlAs infrared LED having a peak wavelength at 850nm molded in water clear plastic package. The forward voltage at low current and at high pulse current roughly correspond to the low values of the standard technology.
MIE-304H4 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-304H4 Features
` Ultra-high radiant intensity
` High response speed
` Standard T-1 ( 3mm ) package, radiant angle : 25°
` Peak wavelength p = 850 nm
` High response speed
` Standard T-1 ( 3mm ) package, radiant angle : 25°
` Peak wavelength p = 850 nm
MIE-324A2 General Description
The MIE-324A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
MIE-324A2 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-324A2 Features
` High radiant power and high radiant intensity
` Suitable ror DC and high pulse current operation
` Standard T-1 ( 3mm) package, radiation angle: 40°
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Suitable ror DC and high pulse current operation
` Standard T-1 ( 3mm) package, radiation angle: 40°
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
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