MIE-324A4, MIE-324H4, MIE-324L3 Selling Leads, Datasheet
D/C:07+
MIE-324A4, MIE-324H4, MIE-324L3 Datasheet download
Part Number: MIE-324A4
MFG: --
Package Cooled:
D/C: 07+
MIE-324A4, MIE-324H4, MIE-324L3
- Table of contents:
Info of MIE-324A4
Info of MIE-324H4
Info of MIE-324L3
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About MIE-324A4
PDF/DataSheet Download
Datasheet: MIE-324A4
File Size: 33589 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
About MIE-324H4
PDF/DataSheet Download
Datasheet: MIE-324H4
File Size: 32256 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
About MIE-324L3
PDF/DataSheet Download
Datasheet: MIE-324L3
File Size: 32985 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
MIE-324A4 General Description
The MIE-324A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
MIE-324A4 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-324A4 Features
` High radiant power and high radiant intensity
` Suitable ror DC and high pulse current operation
` Standard T-1 ( 3mm) package, radiation angle: 40°
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Suitable ror DC and high pulse current operation
` Standard T-1 ( 3mm) package, radiation angle: 40°
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
MIE-324H4 General Description
The MIE-324H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-324H4 has greatly improved long-distance characteristics as well as significantly increased its range of applicability .
MIE-324H4 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-324H4 Features
`Ultra-High radiant intensity
` High response speed
` Standard T-1 ( 3mm ) package, radiant angle : 40°
` Peak wavelength p = 850 nm
` High response speed
` Standard T-1 ( 3mm ) package, radiant angle : 40°
` Peak wavelength p = 850 nm
MIE-324L3 General Description
The MIE-324L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.
MIE-324L3 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-324L3 Features
` High radiant power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm) package, radiant angle: 40°
` Peak wavelength p = 880 nm
` Good spectral matching to si-photodetector
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm) package, radiant angle: 40°
` Peak wavelength p = 880 nm
` Good spectral matching to si-photodetector
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