MIE-114H4

Features: · High power· Mechanically and spectrally matched to the MID-11422 of phototransistor .Specifications Parameter Maximum Rating Unit Power Dissipation 75 mW Peak Forward Current 1 A Continuos Forward Current 50 mA Reverse Voltage 5 V ...

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SeekIC No. : 004421217 Detail

MIE-114H4: Features: · High power· Mechanically and spectrally matched to the MID-11422 of phototransistor .Specifications Parameter Maximum Rating Unit Power Dissipation 75 mW Peak Fo...

floor Price/Ceiling Price

Part Number:
MIE-114H4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

· High power
· Mechanically and spectrally matched to the MID-11422 of phototransistor .



Specifications

Parameter
Maximum Rating
Unit
Power Dissipation
75
mW
Peak Forward Current
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds



Description

The MIE-114H4 is a AlGaAs infrared emitting diode molded in clear, lensed side looking package .

The MIE-114H4 provides a broad range of intensity selection .


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