MIE-114H4 Selling Leads, Price trend, MIE-114H4 DataSheet download, circuit diagram from SeekIC.com

Features: · High power· Mechanically and spectrally matched to the MID-11422 of phototransistor .Specifications Parameter Maximum Rating Unit Power Dissipation 75 mW Peak Forward Current 1 A Continuos Forward Current 50 mA Reverse Voltage 5 V ...

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SeekIC No. : 004421217 Detail

MIE-114H4: Features: · High power· Mechanically and spectrally matched to the MID-11422 of phototransistor .Specifications Parameter Maximum Rating Unit Power Dissipation 75 mW Peak Fo...

MIE-114H4 Data Sheet

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Part Number:: MIE-114H4
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/11/26

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Features: · Selected to specific on-line intensity and radiant intensity· Low cost, plastic side l...
MIE-114A1 evaluate
Features: · Selected to specific on-line intensity and radiant intensity ranges· Low cost, plastic...
MIE-114A2 evaluate
Features: · Selected to specific on-line intensity and radiant intensity ranges· Low cost , plasti...

Product Details

Description

Features:

· High power
· Mechanically and spectrally matched to the MID-11422 of phototransistor .

Specifications

Parameter	Maximum Rating	Unit
Power Dissipation	75	mW
Peak Forward Current	1	A
Continuos Forward Current	50	mA
Reverse Voltage	5	V
Operating Temperature Range	-55^oC to +100^oC
Storage Temperature Range	-55^oC to +100^oC
Lead Soldering Temperature	260^oC for 5 seconds

Description

The MIE-114H4 is a AlGaAs infrared emitting diode molded in clear, lensed side looking package .

The MIE-114H4 provides a broad range of intensity selection .

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MIE-114H4

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