LTE21009R, LTE21009S, LTE2142CP Selling Leads, Datasheet
MFG:N/A Package Cooled:TRANSISTOR D/C:DIP
LTE21009R, LTE21009S, LTE2142CP Datasheet download
Part Number: LTE21009R
MFG: N/A
Package Cooled: TRANSISTOR
D/C: DIP
LTE21009R, LTE21009S, LTE2142CP
- Table of contents:
Info of LTE21009R
Info of LTE21009S
Info of LTE2142CP
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About LTE21009R
PDF/DataSheet Download
Datasheet: LTE21009R
File Size: 57063 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About LTE21009
PDF/DataSheet Download
Datasheet: LTE21009
File Size: 57063 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About LTE21009
PDF/DataSheet Download
Datasheet: LTE21009
File Size: 57063 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
LTE21009R General Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
LTE21009R Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCER | collector-emitter voltage | RBE = 100W | - | 35 | V |
| VCEO | emitter-base voltage | open base | - | 16 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | DC collector current (DC) | - | 250 | mA | |
| Ptot | total power dissipation | Tmb £ 75 °C | - | 4 | W |
| Tstg | storage temperature | -65 | +200 | °C | |
| Tj | operating junction temperature | - | 200 | °C | |
| Tsld | soldering temperature | up to 0.3 mm from case; t £ 10 s |
- | 235 | °C |
LTE21009R Features
· Diffused emitter ballasting resistors
· Self-aligned process entirely ion implanted and gold sandwich metallization
· optimum temperature profile
· excellent performance and reliability
· Input matching cell improves input impedance and facilitates the design of wideband circuits.
· Self-aligned process entirely ion implanted and gold sandwich metallization
· optimum temperature profile
· excellent performance and reliability
· Input matching cell improves input impedance and facilitates the design of wideband circuits.
LTE21009R Typical Application
· Common emitter class-A linear power amplifiers up to 4.2 GHz.
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