Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· optimum temperature profile· excellent performance and reliability· Input matching cell improves input impedance and facilitates the design of wideband circuits.Applicati...
LTE21009R: Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· optimum temperature profile· excellent performance and reliability· In...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCER | collector-emitter voltage | RBE = 100W | - | 35 | V |
VCEO | emitter-base voltage | open base | - | 16 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | DC collector current (DC) | - | 250 | mA | |
Ptot | total power dissipation | Tmb £ 75 °C | - | 4 | W |
Tstg | storage temperature | -65 | +200 | °C | |
Tj | operating junction temperature | - | 200 | °C | |
Tsld | soldering temperature | up to 0.3 mm from case; t £ 10 s |
- | 235 | °C |
LTE21009R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.