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The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.
LTE-3271T Maximum Ratings
PARAMETER
MAXIMUM RATING
UNIT
Power Dissipation Per Segment
150
mW
Peak Forward Current Per Segment ( Frequency 1Khz, 10% duty cycle)
2
A
Continuous Forward Current Per Segment Derating Linear From 25 Per Segment
100
V
Reverse Voltage Per Segment
5
V
Operating Temperature Range
-40 to +85
Storage Temperature Range
-55 to +100
Lead Soldering Temperature [1.6mm(.063") From Body]
260 for 5 Seconds
LTE-3271T Features
Special for high current and low forward voltage. High power. Available for pulse operating. Wide viewing angle. LTE-3271TL/LTE-3371TL are blue transparent color package.