Infrared Emitters Infrared 940nm 1.25V, 20mA, 140deg
LTE-3371TL: Infrared Emitters Infrared 940nm 1.25V, 20mA, 140deg
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Wavelength : | 940 nm | Beam Angle : | 40 deg | ||
Radiant Intensity : | 9.02 mW/sr | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Packaging : | Bulk |
PARAMETER |
MAXIMUM RATING |
UNIT |
Power Dissipation Per Segment |
150 |
mW |
Peak Forward Current Per Segment ( Frequency 1Khz, 10% duty cycle) |
2 |
A |
Continuous Forward Current Per Segment Derating Linear From 25 Per Segment |
100 |
V |
Reverse Voltage Per Segment |
5 |
V |
Operating Temperature Range |
-40 to +85 | |
Storage Temperature Range |
-55 to +100 | |
Lead Soldering Temperature [1.6mm(.063") From Body] |
260 for 5 Seconds |
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emitting
diodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps.