Infrared Emitters Emitter Clear 940nm
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Wavelength : | 940 nm | Radiant Intensity : | 3.31 mW/sr to 12.63 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | T-1 3/4 | Packaging : | Bulk |
PARAMETER |
MAXIMUM RATING |
UNIT |
Power Dissipation Per Segment |
90 |
mW |
Peak Forward Current Per Segment ( Frequency 1Khz, 10% duty cycle) |
1 |
A |
Continuous Forward Current Per Segment Derating Linear From 25 Per Segment |
60 |
V |
Reverse Voltage Per Segment |
5 |
V |
Operating Temperature Range |
-40 to +85 | |
Storage Temperature Range |
-55 to +100 | |
Lead Soldering Temperature [1.6mm(.063") From Body] |
260 for 5 Seconds |
The LTE-2871 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-2871 series provides a broad range of intensity selection. Suffix C-smoke color lens.