KHB5D0N50P, KHB7D0N65F1, KHB7D0N65F1-U/P Selling Leads, Datasheet
MFG:KEC Package Cooled:TO-220 D/C:08+
KHB5D0N50P, KHB7D0N65F1, KHB7D0N65F1-U/P Datasheet download
Part Number: KHB5D0N50P
MFG: KEC
Package Cooled: TO-220
D/C: 08+
KHB5D0N50P, KHB7D0N65F1, KHB7D0N65F1-U/P
- Table of contents:
Info of KHB5D0N50P
Info of KHB7D0N65F1
Info of KHB7D0N65F1-U/P
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About KHB5D0N50P
PDF/DataSheet Download
Datasheet: KHB5D0N50P
File Size: 73373 KB
Manufacturer: KEC
Download : Click here to Download
About KHB011N40F1
PDF/DataSheet Download
Datasheet: KHB011N40F1
File Size: 73373 KB
Manufacturer: KEC
Download : Click here to Download
About KHB011N40F1
PDF/DataSheet Download
Datasheet: KHB011N40F1
File Size: 73373 KB
Manufacturer: KEC
Download : Click here to Download
KHB5D0N50P General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
KHB5D0N50P Maximum Ratings
|
CHARACTERISTIC |
SYMBOL |
Rating |
UNIT | ||
|
KHB5D0N50P |
KHB5D0N50F KHB5D0N50F2 | ||||
| Drain-Source Voltage |
VDSS |
500 |
V | ||
| Gate-Source Voltage |
VGSS |
±30 |
V | ||
| Drain Current | @TC=25 |
ID |
5.0 |
5.0* |
A |
| @TC=100 |
2.9 |
2.9* | |||
| Pulse (Note 1) |
IDP |
20 |
20* | ||
| Single pulse Avalanche Energy (Note 2) |
EAS |
390 |
mJ | ||
| Repetitive Avalanche Energy (Note 1) |
EAR |
9.2 |
mJ | ||
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
3.5 |
V/ns | ||
| Drain Power Dissipation | TC=25 |
PD |
73 |
38 |
W |
| Derate above 25 |
0.74 |
0.3 |
W/ | ||
| Maximum Junction Temperature |
Tj |
150 |
|||
| Storage temperature range |
TSTG |
-55~150 |
|||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case |
RthJC |
1.71 |
3.31 |
/W | |
| Thermal Resistance, Case-to-Sink |
RthCS |
0.5 |
- |
/W | |
| Thermal Resistance, Junction-to- Ambient |
RthJA |
62.5 |
62.5 |
/W | |
* : Drain current limited by maximum junction temperature.
KHB5D0N50P Features
·VDSS= 500V, ID= 5.0A
·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V
·Qg(typ.) = 21nC
·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V
·Qg(typ.) = 21nC
KHB7D0N65F1 General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
KHB7D0N65F1 Maximum Ratings
|
CHARACTERISTIC |
SYMBOL |
Rating |
UNIT | ||
|
KHB7D0N65P1 |
KHB7D0N65F1 KHB7D0N65F2 | ||||
| Drain-Source Voltage |
VDSS |
650 |
V | ||
| Gate-Source Voltage |
VGSS |
±30 |
V | ||
| Drain Current | @TC=25 |
ID |
7 |
7* |
A |
| @TC=100 |
4.2 |
4.2* | |||
| Pulse (Note 1) |
IDP |
28 |
28* | ||
| Single pulse Avalanche Energy (Note 2) |
EAS |
212 |
mJ | ||
| Repetitive Avalanche Energy (Note 1) |
EAR |
1.6 |
mJ | ||
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | ||
| Drain Power Dissipation | TC=25 |
PD |
160 |
52 |
W |
| Derate above 25 |
1.28 |
0.42 |
W/ | ||
| Maximum Junction Temperature |
Tj |
150 |
|||
| Storage temperature range |
TSTG |
-55~150 |
|||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case |
RthJC |
0.78 |
2.4 |
/W | |
| Thermal Resistance, Case-to-Sink |
RthCS |
0.5 |
- |
/W | |
| Thermal Resistance, Junction-to- Ambient |
RthJA |
62.5 |
62.5 |
/W | |
KHB7D0N65F1 Features
·VDSS=650V, ID=7A
·Drain-Source ON Resistance : SDS(ON)=1.4 @VGS=10V
·Qg(typ.)= 32nC
·Drain-Source ON Resistance : SDS(ON)=1.4 @VGS=10V
·Qg(typ.)= 32nC
KHB7D0N65F1 Connection Diagram
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