Position: Home  > All Categories> Integrated Circuits (ICs) > KHB011N40F2

KHB011N40F2

Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ.) =32.5nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB011N40P1 KHB011N40F1KHB011N40F2 Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 ...

product image

KHB011N40F2 Picture
See larger image
SeekIC No. : 004385336 Detail

KHB011N40F2: Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ.) =32.5nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB011N40P1 KHB011...

KHB011N40F2 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KHB011N40F2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`VDSS(Min.)= 400V, ID= 10.5A
`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V
`Qg(typ.) =32.5nC



Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB011N40P1
KHB011N40F1
KHB011N40F2
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
10.5
10.5*
A
@TC=100
6.6
6.6*
Pulse (Note 1)
IDP
42
42*
Single pulse Avalanche Energy (Note 2)
EAS
360
mJ
Repetitive Avalanche Energy (Note 1)
EAR
13.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Drain Power Dissipation TC=25
PD
135
44
W
Derate above 25
1.07
0.35
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.93
2.86
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.

 




Description

This planar stripe MOSFET KHB011N40F2 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Optical Inspection Equipment
AA924
A21K4B
Tapes, Adhesives
803
AC452-2
Undefined Category
VI-B63-IU
X27 589
View more