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KHB011N40P1

Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ.) =32.5nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB011N40P1 KHB011N40F1KHB011N40F2 Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 ...

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SeekIC No. : 004385337 Detail

KHB011N40P1: Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ.) =32.5nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB011N40P1 KHB011...

KHB011N40P1 Data Sheet

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Part Number:
KHB011N40P1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`VDSS(Min.)= 400V, ID= 10.5A
`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V
`Qg(typ.) =32.5nC



Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB011N40P1
KHB011N40F1
KHB011N40F2
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
10.5
10.5*
A
@TC=100
6.6
6.6*
Pulse (Note 1)
IDP
42
42*
Single pulse Avalanche Energy (Note 2)
EAS
360
mJ
Repetitive Avalanche Energy (Note 1)
EAR
13.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Drain Power Dissipation TC=25
PD
135
44
W
Derate above 25
1.07
0.35
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.93
2.86
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.

 




Description

This planar stripe MOSFET KHB011N40P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.




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