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KHB019N20F1

Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB019N20P1 KHB019N20F1KHB019N20F2 Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±30 V Drain...

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SeekIC No. : 004385338 Detail

KHB019N20F1: Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB019N20P1 KHB019N20F1KHB019N...

KHB019N20F1 Data Sheet

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Part Number:
KHB019N20F1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·VDSS=200V, ID=19A
·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V
·Qg(typ.)=35nC



Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB019N20P1
KHB019N20F1
KHB019N20F2
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
19
19*
A
@TC=100
12.1
12.1*
Pulse (Note 1)
IDP
76
76*
Single pulse Avalanche Energy (Note 2)
EAS
250
mJ
Repetitive Avalanche Energy (Note 1)
EAR
14
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Drain Power Dissipation TC=25
PD
140
50
W
Derate above 25
1.12
0.4
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.89
2.5
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.

 




Description

This planar stripe MOSFET KHB019N20F1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies.




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