Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ.) =32.5nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB011N40P1 KHB011N40F1KHB011N40F2 Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 ...
KHB011N40F1: Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ.) =32.5nCSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB011N40P1 KHB011...
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Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpe...
Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpe...
Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpe...
CHARACTERISTIC |
SYMBOL |
Rating |
UNIT | ||
KHB011N40P1 |
KHB011N40F1 KHB011N40F2 | ||||
Drain-Source Voltage |
VDSS |
400 |
V | ||
Gate-Source Voltage |
VGSS |
±30 |
V | ||
Drain Current | @TC=25 |
ID |
10.5 |
10.5* |
A |
@TC=100 |
6.6 |
6.6* | |||
Pulse (Note 1) |
IDP |
42 |
42* | ||
Single pulse Avalanche Energy (Note 2) |
EAS |
360 |
mJ | ||
Repetitive Avalanche Energy (Note 1) |
EAR |
13.5 |
mJ | ||
Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns | ||
Drain Power Dissipation | TC=25 |
PD |
135 |
44 |
W |
Derate above 25 |
1.07 |
0.35 |
W/ | ||
Maximum Junction Temperature |
Tj |
150 |
|||
Storage temperature range |
TSTG |
-55~150 |
|||
Thermal Characteristics | |||||
Thermal Resistance, Junction-to-Case |
RthJC |
0.93 |
2.86 |
/W | |
Thermal Resistance, Case-to-Sink |
RthCS |
0.5 |
- |
/W | |
Thermal Resistance, Junction-to- Ambient |
RthJA |
62.5 |
62.5 |
/W |
This planar stripe MOSFET KHB011N40F1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.