Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications Parameter Symbol KHB019N20P1 KHB019N20F1 Unit Drain to source voltage VDSS 20 20 V Gate to source voltage VGSS ±12 ±8.0 V Drain current Continuous *1 TA = 25 TA =...
KHB019N20P1: Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications Parameter Symbol KHB019N20P1 KHB019N20F1 Unit Drain to source voltage VDSS ...
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Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ....
Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ....
Features: `VDSS(Min.)= 400V, ID= 10.5A`Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V`Qg(typ....
Parameter | Symbol | KHB019N20P1 | KHB019N20F1 | Unit |
Drain to source voltage | VDSS | 20 | 20 | V |
Gate to source voltage | VGSS | ±12 | ±8.0 | V |
Drain current Continuous *1 TA = 25 TA = 85 t 5 |
ID | 19 12.1 |
19 12.1 |
A |
Drain current Pulsed (Note1) | IDP | 76 | 76* | A |
Single Pulsed Avalanche Energy (Note 2) |
EAS | 250 | mJ | |
Repetitive Avalanche Energy (Note 1) |
EAR | 14 | mJ | |
Peak Diode Recovery dv/dt (Note 3) |
dv/dt | 4.5 | V/ns | |
Drain PowerDissipation Tc=25 Derate above 25 |
PD |
140
|
50 0.4 |
W |
Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 |
This planar stripe MOSFET KHB019N20P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB019N20P1 is mainly suitable for DC/DC converters and switching mode power supplies.