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KHB019N20P1

Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications Parameter Symbol KHB019N20P1 KHB019N20F1 Unit Drain to source voltage VDSS 20 20 V Gate to source voltage VGSS ±12 ±8.0 V Drain current Continuous *1 TA = 25 TA =...

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KHB019N20P1: Features: ·VDSS=200V, ID=19A·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V·Qg(typ.)=35nCSpecifications Parameter Symbol KHB019N20P1 KHB019N20F1 Unit Drain to source voltage VDSS ...

KHB019N20P1 Data Sheet

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Part Number:
KHB019N20P1
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·VDSS=200V, ID=19A
·Drain-Source ON Resistance : RDS(ON)=0.18 @VGS = 10V
·Qg(typ.)=35nC


Specifications

Parameter Symbol KHB019N20P1 KHB019N20F1 Unit
Drain to source voltage VDSS 20 20 V
Gate to source voltage VGSS ±12 ±8.0 V
Drain current Continuous *1 TA = 25
TA = 85
t 5		 ID 19
12.1		 19
12.1		 A
Drain current Pulsed (Note1) IDP 76 76* A
Single Pulsed Avalanche Energy
(Note 2)		 EAS 250 mJ
Repetitive Avalanche Energy
(Note 1)		 EAR 14 mJ
Peak Diode Recovery dv/dt
(Note 3)		 dv/dt 4.5 V/ns
Drain PowerDissipation
Tc=25
Derate above 25		 PD

140
1.12

 

 50
0.4		 W
Operating and Storage Temperature Range TJ, Tstg -55 to 150
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB019N20P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB019N20P1 is mainly suitable for DC/DC converters and switching mode power supplies.




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