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KHB1D0N60D/I

Features: `VDSS= 600V, ID= 1.0A`Drain-Source ON Resistance :`R DS(ON)=12 VGS = 10V`Qg(typ.) = 5.9nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB1D0N60D KHB1D0N60I Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Cu...

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KHB1D0N60D/I: Features: `VDSS= 600V, ID= 1.0A`Drain-Source ON Resistance :`R DS(ON)=12 VGS = 10V`Qg(typ.) = 5.9nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB1D0N60D KHB1D0N60I ...

KHB1D0N60D/I Data Sheet

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Part Number:
KHB1D0N60D/I
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`VDSS= 600V, ID= 1.0A
`Drain-Source ON Resistance :
`R DS(ON)=12 VGS = 10V
`Qg(typ.) = 5.9nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB1D0N60D
KHB1D0N60I
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
@TC=25°C
ID
1.0
1.0*
A
@TC=100°C
0.57
0.57*
Pulsed (Note1)
IDP
3.0
3.0*
Single Pulsed Avalanche Energy (Note 2)
EAS
50
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
2.8
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
5.5
V/ns
Drain Power
Dissipation
Ta=25°C
PD
28
28
W
Derate above 25°C
0.22
0.22
W/°C
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
-55~ 150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
4.53
4.53
°C/W
Thermal Resistance, Case-to-Sink
RthCS
50
50
°C/W
Thermal Resistance, Junction-to- Ambient
RthJA
110
110
°C/W



Description

This planar stripe MOSFET KHB1D0N60D/I has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB1D0N60D/I is mainly suitable for electronic ballast and switching mode power supplies.




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