K4N33, K4N35, K4N511638B-ZCB3 Selling Leads, Datasheet
MFG:SAMSUNG(512) Package Cooled:N/A D/C:08+09+
K4N33, K4N35, K4N511638B-ZCB3 Datasheet download
Part Number: K4N33
MFG: SAMSUNG(512)
Package Cooled: N/A
D/C: 08+09+
MFG:SAMSUNG(512) Package Cooled:N/A D/C:08+09+
K4N33, K4N35, K4N511638B-ZCB3 Datasheet download
MFG: SAMSUNG(512)
Package Cooled: N/A
D/C: 08+09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: K4N33
File Size: 240107 KB
Manufacturer: KODENSHI [KODENSHI KOREA CORP.]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4N35
File Size: 161791 KB
Manufacturer: KODENSHI [KODENSHI KOREA CORP.]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4N25
File Size: 262490 KB
Manufacturer: KODENSHI [KODENSHI KOREA CORP.]
Download : Click here to Download
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-pin package.
Parameter | Symbol | Rating | Unit | |
Input | Forward Current | IF | 80 | mA |
Reverse Voltage | VR | 5 | V | |
Peak Forward Current *1 | IFP | 3 | A | |
Power Dissipation | PD | 150 | mW | |
Output | Collector-Emitter Breakdown Voltage | BVCEO | 30 | V |
Emitter-Collector Breakdown Voltage | BVCEO | 5 | V | |
Collector-Base Breakdown Voltage | BVCEO | 30 | V | |
Collector Current | IC | 100 | mA | |
Collector Power Dissipation | PC | 150 | mW | |
Input to Output Isolation Voltage*2 | Viso | AC2500 | Vrms | |
Storage Temperature | Tstg | -55~+125 | ℃ | |
Operating Temperature | Topr | -30~+100 | ℃ | |
Lead Soldering Temperature*3 | Tsol | 260 | ℃ | |
Total Power Dissipation | Ptot | 250 | mW |
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package.
Parameter | Symbol | Rating | Unit | |
Input | Forward Current | IF | 80 | mA |
Reverse Voltage | VR | 5 | V | |
Peak Forward Current *1 | IFP | 3 | A | |
Power Dissipation | PD | 150 | mW | |
Output | Collector-Emitter Breakdown Voltage | BVCEO | 35 *4 | V |
Emitter-Collector Breakdown Voltage | BVCEO | 6 | V | |
Collector-Base Breakdown Voltage | BVCEO | 70 | V | |
Collector Current | IC | 50 | mA | |
Collector Power Dissipation | PC | 150 | mW | |
Input to Output Isolation Voltage*2 | Viso | AC2500 | Vrms | |
Storage Temperature | Tstg | -55~+125 | ℃ | |
Operating Temperature | Topr | -30~+100 | ℃ | |
Lead Soldering Temperature*3 | Tsol | 260 | ℃ | |
Total Power Dissipation | Ptot | 200 | mW |
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
*4. Customer Option