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K4H510438C, K4H510438C-UC, K4H510438C-UCA2

K4H510438C, K4H510438C-UC, K4H510438C-UCA2 Selling Leads, Datasheet

MFG:SAMSUNG  Package Cooled:09+  D/C:09+

K4H510438C, K4H510438C-UC, K4H510438C-UCA2 Picture

K4H510438C, K4H510438C-UC, K4H510438C-UCA2 Datasheet download

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Part Number: K4H510438C

 

MFG: SAMSUNG

Package Cooled: 09+

D/C: 09+

 

 

 
 
 
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About K4H510438C-LA2

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Datasheet: K4H510438C-LA2

File Size: 376482 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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About K4H510438C-UC

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Datasheet: K4H510438C-UC

File Size: 376482 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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About K4H510438C-UCA2

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Datasheet: K4H510438C-UCA2

File Size: 376482 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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K4H510438C-UCA2 General Description

The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 words by 4bits, fabricated with SAMSUNGs high performance CMOS technology.The K4H510438C-UCA2 belongs to K4H510438C series.

Key features of the K4H510438C-UCA2 are:(1)VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333;(2)VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400;(3)double-data-rate architecture; two data transfers per clock cycle;(4)bidirectional data strobe [DQS] (x4,x8) and [L(U)DQS] (x16);(5)four banks operation;(6)differential clock inputs(CK and CK);(7)DLL aligns DQ and DQS transition with CK transition;(8)MRS cycle with address key programs;(9)all inputs except data and DM are sampled at the positive going edge of the system clock(CK);(10)data I/O transactions on both edges of data strobe;(11):edge aligned data output, center aligned data input;(12):LDM,UDM for write masking only (x16);(13):DM for write masking only (x4, x8);(14):auto and self refresh;(15):7.8us refresh interval(8K/64ms refresh);(16):maximum burst refresh cycle is 8;(17):66pin TSOP II Pb-free package;(18)RoHS compliant.

The absolute maximum ratings of the K4H510438C-UCA2 can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VIN,VOUT,the value is -0.5 to 3.6,the unit is V;(2):the parameter is voltage on VDD and VDDQ supply relative to VSS,the symbol is VDD, VDDQ,the value is -1.0 to 3.6,the unit is V;(3):the parameter is storage temperature,the symbol is TSTG,the value is -55 to +150,the unit is ;(4):the parameter is power dissipation,the symbol is PD,the value is 1.5,the unit is W;(5):the parameter is short circuit current,the symbol is IOS,the value is 50,the unit is mA.

K4H510438C-UCA2 Connection Diagram

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