Features: * Double-data-rate architecture; two data transfers per clock cycle* Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) * Four banks operation* Differential clock inputs(CK and CK )* DLL aligns DQ and DQS transition with CK transition* MRS cycle with address key programs -. Read l...
K4H1G0438M-LA2: Features: * Double-data-rate architecture; two data transfers per clock cycle* Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) * Four banks operation* Differential clock inputs(CK and CK )...
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Features: • Double-data-rate architecture; two data transfers per clock cycle• Bidirec...
Features: • Double-data-rate architecture; two data transfers per clock cycle• Bidirec...
Features: • Double-data-rate architecture; two data transfers per clock cycle• Bidirec...
* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
* Four banks operation
* Differential clock inputs(CK and CK )
* DLL aligns DQ and DQS transition with CK transition
* MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave)
* All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
* Data I/O transactions on both edges of data strobe
* Edge aligned data output, center aligned data input
* LDM,UDM for write masking only (x16)
* DM for write masking only (x4, x8)
* Auto & Self refresh
* 7.8us refresh interval(8K/64ms refresh)
* tRFC(Refresh row cycle time) = 120ns
* Maximum burst refresh cycle : 8
* 66pin TSOP II Pb-Free package
* RoHS compliant
Parameter | Symbol | Value | UNIT |
Voltage on any pin relative to VSS |
VIN , VOUT |
-0.5 ~ 3.6 | V |
Voltage on VDD & V DDQ supply relative to VSS |
VDD , VDDQ |
-1.0 ~ 3.6 |
V |
Storage temperature | TSTG |
-55 ~ +150 | |
Power dissipation | PD |
1.5 | W |
Short circuit current | IOS |
50 | mA |