K4H1G0738C-UCB0

The K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x 33,554,432 words by 8bits,fabricated with SAMSUNGs high performance CMOS technology.The K4H1G0738C-UCB0 belongs to K4H1G0738C series.

Key features of the K4H1G0738C-UCB0 are:(1)double-data-rate architecture; two data transfers per clock cycle;(2)bidirectional data strobe DQS;(3)four banks operation;(4)differential clock inputs(CK and CK);(5)DLL aligns DQ and DQS transition with CK transition;(6)MRS cycle with address key programs;(7)all inputs except data and DM are sampled at the positive going edge of the system clock(CK);(8)data I/O transactions on both edges of data strobe;(9)edge aligned data output, center aligned data input;(10)DM for write masking only (x4, x8);(11):auto and self refresh;(12):7.8us refresh interval(8K/64ms refresh);(13):maximum burst refresh cycle is 8;(14):auto and self refresh;(15):7.8us refresh interval(8K/64ms refresh);(16):maximum burst refresh cycle is 8;(17):66pin TSOP II Pb-free package;(18)RoHS compliant.

The absolute maximum ratings of the K4H1G0738C-UCB0 can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VIN,VOUT,the value is -0.5 to 3.6,the unit is V;(2):the parameter is voltage on VDD and VDDQ supply relative to VSS,the symbol is VDD, VDDQ,the value is -1.0 to 3.6,the unit is V;(3):the parameter is storage temperature,the symbol is TSTG,the value is -55 to +150,the unit is ;(4):the parameter is power dissipation,the symbol is PD,the value is 1.5,the unit is W;(5):the parameter is short circuit current,the symbol is IOS,the value is 50,the unit is mA.