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IXSN62N60U1 IGBT, IXSN80N60AU1, IXSN80N60AV1

IXSN62N60U1 IGBT, IXSN80N60AU1, IXSN80N60AV1 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:MODULE  D/C:N/A

IXSN62N60U1 IGBT, IXSN80N60AU1, IXSN80N60AV1 Picture

IXSN62N60U1 IGBT, IXSN80N60AU1, IXSN80N60AV1 Datasheet download

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Part Number: IXSN62N60U1 IGBT

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: MODULE

D/C: N/A

Description: IGBT 100A 600V SOT-227B

 

 
 
 
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About IXSA10N60B2D1

PDF/DataSheet Download

Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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IXSN80N60AU1 Suppliers

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About IXSN80N60AU1

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Datasheet: IXSN80N60AU1

File Size: 98890 KB

Manufacturer: IXYS [IXYS Corporation]

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IXSN80N60AV1 Suppliers

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About IXSA10N60B2D1

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Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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IXSN80N60AU1 Parameters

Technical/Catalog InformationIXSN80N60AU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)160A
Vce(on) (Max) @ Vge, Ic*
Power - Max500W
Mounting TypeChassis Mount
Package / CaseSOT-227B miniBLOC
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSN80N60AU1
IXSN80N60AU1

IXSN80N60AU1 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
ID25
ID90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
90
50
180

A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM =160
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive
10 s
PC TC = 25°C 500 W
VISOL 50/60 Hz t = 1 min
IISOL 1 mA t = 1 s
2500
3000
V~
V~
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
Md Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Weight
30 g

IXSN80N60AU1 Features

· International standard package miniBLOC
· Aluminium-nitride isolation
    - high power dissipation
· Isolation voltage 3000 V~
· UL registered E 153432
· Low VCE(sat)
    - for minimum on-state conduction losses
· Fast Recovery Epitaxial Diode
    - short trr and IRM
· Low collector-to-case capacitance (< 60 pF)
    - reduced RFI
· Low package inductance (< 10 nH)
    - easy to drive and to protect

IXSN80N60AU1 Typical Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninterruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies

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