Features: • High voltage IGBT with guaranteed short circuit SOA capability.• IGBT with anti-parallel diode in one package• 2nd generation HDMOSTM process Low VCE(sat)- for minimum on-state conduction losses• MOS Gate turn-on- drive simplicityApplication• AC motor spee...
IXSH10N120AU1: Features: • High voltage IGBT with guaranteed short circuit SOA capability.• IGBT with anti-parallel diode in one package• 2nd generation HDMOSTM process Low VCE(sat)- for minimum ...
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Features: ·International standard package JEDEC TO-247·High frequency IGBT with guaranteed Short C...
Features: • International standard package JEDEC TO-247• High frequency IGBT with guar...
• High voltage IGBT with guaranteed short circuit SOA capability.
• IGBT with anti-parallel diode in one package
• 2nd generation HDMOSTM process Low VCE(sat)
- for minimum on-state conduction losses
• MOS Gate turn-on
- drive simplicity
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M? |
1200 1200 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
20 10 40 |
A A A |
SSOA (RBSOA) |
VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 100 H |
ICM = 20 @ 0.8 VCES |
A |
tSC (SCSOA) |
VGE = 15 V, VCE =360 V, TJ = 125°C RG = 33 , non repetitive |
5 | s |
PC | TC = 25°C | 100 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque | 1.15/10 | Nm/lb.in. |
Weight | 6 | g | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |