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IXSK35N120AU1, IXSK40N60CD1, IXSM20N60

IXSK35N120AU1, IXSK40N60CD1, IXSM20N60 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:IXYS  D/C:04+

IXSK35N120AU1 Picture

IXSK35N120AU1, IXSK40N60CD1, IXSM20N60 Datasheet download

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Part Number: IXSK35N120AU1

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 04+

Description: IGBT V SCSOA TO-264

 

 
 
 
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About IXSK35N120AU1

PDF/DataSheet Download

Datasheet: IXSK35N120AU1

File Size: 41573 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXSA10N60B2D1

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Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXSA10N60B2D1

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Datasheet: IXSA10N60B2D1

File Size: 603250 KB

Manufacturer: IXYS [IXYS Corporation]

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IXSK35N120AU1 Parameters

Technical/Catalog InformationIXSK35N120AU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 35A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-264AA
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK35N120AU1
IXSK35N120AU1

IXSK35N120AU1 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1200
1200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
70
35
140

A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM =70
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive
10 s
PC TC = 25°C IGBT
Diode
300
190
W
W
TJ
TJM
Tstg
TL
1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
Md Mounting torque 1.15/13 Nm/lb.in.
Weight   10 g

IXSK35N120AU1 Features

• International standard package JEDEC TO-264 AA
• High frequency IGBT and anti-parallel FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat)
   - for minimum on-state conduction losses
• MOS Gate turn-on
   - drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
   - soft recovery with low IRM

IXSK35N120AU1 Typical Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

IXSK40N60CD1 Parameters

Technical/Catalog InformationIXSK40N60CD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Power - Max280W
Mounting TypeThrough Hole
Package / CaseTO-264AA
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK40N60CD1
IXSK40N60CD1

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