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ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive
1 1.8
mJ J
IXKN75N60C Features
·miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly · fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness ·Enhanced total power density
IXKN75N60C Typical Application
·Switched mode power supplies (SMPS) ·Uninterruptible power supplies (UPS) ·Power factor correction (PFC) ·Welding ·Inductive heating
