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IXKC40N60C

MOSFET 28 Amps 600V 0.1 Rds

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SeekIC No. : 00158248 Detail

IXKC40N60C: MOSFET 28 Amps 600V 0.1 Rds

IXKC40N60C Data Sheet

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Part Number:
IXKC40N60C
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.96 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 24 A
Package / Case : ISOPLUS 220
Resistance Drain-Source RDS (on) : 0.96 Ohms


Features:

· Silicon chip on Direct-Copper-Bond substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
· 2ND generation CoolMOS power MOSFET
    - High blocking capability
    - Low on resistance
    - Avalanche rated for unclamped inductive switching (UIS)
· Low thermal resistance due to reduced chip thickness
· Low drain to tab capacitance(<30pF)


Application

· Switched Mode Power Supplies (SMPS)
· Uninterruptible Power Supplies (UPS)
· Power Factor Correction (PFC)
· Welding
· Inductive Heating


Specifications

Symbol

Conditions
Maximum
Ratings
VDSS
 TJ = 25 to 150
600
V
VGS
 Continuous
±20
V
ID25
ID90
 TC = 25 Note 1
TC = 90 Note 1
28
19
A
A
ID(RMS)
 Package lead current limit
45
A
EAS
EAR
 Io = 10A, TC = 25
Io = 20A
600
1
mJ
mJ
PD
 TC = 25
250
W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +125


TL
 1.6 mm (0.062 in.) from case for 10 s
300
VISOL
 RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
FC
Mounting force
11 ... 65 / 2.4 ...11
N/lb
Weight
  
3
g



Parameters:

Technical/Catalog InformationIXKC40N60C
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C28A
Rds On (Max) @ Id, Vgs95 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds 4800pF @ 25V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs230nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKC40N60C
IXKC40N60C



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