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IXKC19N60C5

MOSFET 19 Amps 600V 0.125 Rds

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SeekIC No. : 00153858 Detail

IXKC19N60C5: MOSFET 19 Amps 600V 0.125 Rds

IXKC19N60C5 Data Sheet

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Part Number:
IXKC19N60C5
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.125 Ohms
Package / Case : ISOPLUS 220


Parameters:

Technical/Catalog InformationIXKC19N60C5
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs125 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 100V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKC19N60C5
IXKC19N60C5



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