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IXKC13N80C

MOSFET 13 Amps 800V 0.29 Rds

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SeekIC No. : 00158271 Detail

IXKC13N80C: MOSFET 13 Amps 800V 0.29 Rds

IXKC13N80C Data Sheet

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Part Number:
IXKC13N80C
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 13 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.29 Ohms
Package / Case : ISOPLUS 220


Features:

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
·3RD generation CoolMOS power MOSFET
   - High blocking capability
   - Low on resistance
   - Avalanche rated for unclamped inductive switching (UIS)
·Low thermal resistance due to reduced chip thickness
·Low drain to tab capacitance(<30pF)


Application

· Switched Mode Power Supplies (SMPS)
· Uninterruptible Power Supplies (UPS)
· Power Factor Correction (PFC)
· Welding
· Inductive Heating


Specifications

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 800
 V
V
VGS Continuous ±20
 V
ID25
ID90
 TC = 25°C; Note 1
TC = 90°C; Note 1
 13
9

A
A


ID(RMS) Package lead current limit 45 A
EAS
EAR		 ID = 4A, TC = 25°C
ID = 10A		 670
0.5		 mJ
mJ
dv/dt VDS < VDSS, IF 17 A, TVJ = 150°C
dS/dt = 100 A/µs		 6 V/ns
PD TC = 25°C 125 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300
 °C
VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
FC Mounting force 11 ... 65 / 2.4 ...11 Nm/lb.in.
Weight   2 g



Parameters:

Technical/Catalog InformationIXKC13N80C
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs290 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 25V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKC13N80C
IXKC13N80C



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