MOSFET 40 Amps 600V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 38 A | ||
Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS i4-Pac | Packaging : | Tube |
VDSS |
TVJ = 25 to 150 |
600 |
V |
VGS |
±20 |
V | |
ID25 ID90 |
TC = 25 TC = 90 |
38 25 |
A A |
Technical/Catalog Information | IXKF40N60SCD1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 38A |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | - |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 250nC @ 10V |
Package / Case | ISOPLUS i4-PAC? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXKF40N60SCD1 IXKF40N60SCD1 |