IR03H420, IR041C4189, IR041L Selling Leads, Datasheet
MFG:N/A Package Cooled:NA/ D/C:09+
IR03H420, IR041C4189, IR041L Datasheet download
Part Number: IR03H420
MFG: N/A
Package Cooled: NA/
D/C: 09+
IR03H420, IR041C4189, IR041L
- Table of contents:
Info of IR03H420
Info of IR041C4189
Info of IR041L
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About IR03H420
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Datasheet: IR03H420
File Size: 60990 KB
Manufacturer: IRF [International Rectifier]
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About IR01H(D)214
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Datasheet: IR01H(D)214
File Size: 58941 KB
Manufacturer:
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About IR01H(D)214
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Datasheet: IR01H(D)214
File Size: 58941 KB
Manufacturer:
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IR03H420 General Description
The IR03H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts.
IR03H420 Maximum Ratings
| Symbol | Definition | Min. | Max. | Units |
| VIN | High voltage supply | - 0.3 | 500 | V |
| VB | High side floating supply absolute voltage | - 0.3 | 525 | |
| VO | Half-bridge output voltage | - 0.3 | VIN+ 0.3 | |
| VIH/VIL | Logic input voltage (HIN & LIN) | - 0.3 | Vcc + 0.3 | |
| VCC | Low side and logic fixed supply voltage | - 0.3 | 25 | |
| dV/dt | Peak diode recovery dv/dt | - | 3.5 | V/ns |
| PD | Package power dissipation @ TA +25 | - | 2.00 | W |
| RJA | Thermal resistance, junction to ambient | - | 60 | /W |
| TJ | Junction temperature | -55 | 150 | |
| TS | Storage temperature | -55 | 150 | |
| TL | Lead temperature (soldering, 10 seconds) | - | 300 |
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
IR03H420 Features
·Output Power MOSFETs in half-bridge configuration
·500V Rated Breakdown Voltage
·High side gate drive designed for bootstrap operation
·Matched propagation delay for both channels
·Independent high and low side output channels
·Undervoltage lockout
·5V Schmitt-triggered input logic
·Half-Bridge output in phase with HIN
·Cross conduction prevention logic
·Internally set dead time
·500V Rated Breakdown Voltage
·High side gate drive designed for bootstrap operation
·Matched propagation delay for both channels
·Independent high and low side output channels
·Undervoltage lockout
·5V Schmitt-triggered input logic
·Half-Bridge output in phase with HIN
·Cross conduction prevention logic
·Internally set dead time
IR03H420 Connection Diagram
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