IR02H420

Features: Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels Independent high and low side output channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridg...

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IR02H420 Picture
SeekIC No. : 004375989 Detail

IR02H420: Features: Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels Independen...

floor Price/Ceiling Price

Part Number:
IR02H420
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

  Output Power MOSFETs in half-bridge configuration
  500V Rated Breakdown Voltage
  High side gate drive designed for bootstrap operation
  Matched propagation delay for both channels
  Independent high and low side output channels
  Undervoltage lockout
 5V Schmitt-triggered input logic
  Half-Bridge output out of phase with HIN



Pinout

  Connection Diagram


Specifications

  Parameter
Symbol Definition
Min.
Max.
Units
VIN High Voltage Supply
-0.3
500
V
VB High Side Floating Supply Absolute Voltage
-0.3
525
VO Half-Bridge Output Voltage
-0.3
VIN + 0.3
VIH/VIL Logic Input Voltage (HIN & LIN)
-0.3
VCC + 0.3
VCC Low Side and Logic Fixed Supply Voltage
-0.3
25
dv/dt Peak Diode Recovery dv/dt
---
3.5
V/ns
PD Package Power Dissipation @ TA+25ºC
---
2.00
W
RqJA Thermal Resistance, Junction to Ambient
---
60
ºC/W
TJ Junction Temperature
-55
150
ºC
TS Storage Temperature
-55
150
TL Lead Temperature (Soldering, 10 seconds)
---
300



Description

    The  IR02H420 is a high voltage, high speed half bridge.  Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs of the IR02H420 are compatible with standard CMOS or LSTTL outputs.  The front end features an independent high and low side driver in phase with the logic compatible input signals.  The output  features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half-bridge.  Propagation delays for the high and low side power MOSFETs are matched to simplify use.  The device can operate up to 500 volts.




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