Features: • Output Power MOSFETs in half-bridge configuration• 500V rated breakdown voltage• High side gate drive designed for bootstrap operation• Matched propagation delay for both channels• Undervoltage lockout• 5V Schmitt-triggered input logic• Half-Br...
IR01H(D)214-P2: Features: • Output Power MOSFETs in half-bridge configuration• 500V rated breakdown voltage• High side gate drive designed for bootstrap operation• Matched propagation delay ...
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Features: • Output Power MOSFETs in half-bridge configuration• 500V rated breakdown vo...
Features: · Output Power MOSFETs in half-bridge configuration· 500V rated breakdown voltage· High ...
Features: • Output Power MOSFETs in half-bridge configuration• 500V rated breakdown vo...
Symbol | Definition |
Min. |
Max. |
Units |
VIN |
High Voltage Supply 214/224 |
-0.3 |
250 |
V |
420 |
-0.3 |
500 | ||
VB | High Side Floating Supply Absolute Voltage 214/224 |
-0.3 |
275 | |
420 |
-0.3 |
525 | ||
VO | Half-Bridge Output |
-0.3 |
VIN + 0.3 | |
VIH/VIL | Logic Input Voltage (HIN & LIN) |
-0.3 |
Vcc + 0.3 | |
VCC | Low Side and Logic Fixed Supply Voltage |
-0.3 |
25 | |
dV/dt | Peak Diode Recovery dv/dt |
- |
3.50 |
V/ns |
PD | Package Power Dissipation @ TA +25°C |
- |
2 |
W |
- P2 |
4.0 | |||
RTHJA | Thermal Resistance, Junction to Ambient |
- |
60 |
°C/W |
- P2 |
30 | |||
RTHJC | Thermal Resistance, Junction to Case (heatsink) - P2 |
- |
20 | |
TJ | Junction Temperature |
-55 |
150 |
°C |
TS | Storage Temperature |
-55 |
150 | |
TL | Lead Temperature (Soldering, 10 seconds) |
- |
300 |
The IR01H(D)214-P2 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs of the IR01H(D)214-P2 are compat-ible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use.