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IR026A, IR02H420, IR-02T

IR026A, IR02H420, IR-02T Selling Leads, Datasheet

MFG:IR  Package Cooled:SOP-8  D/C:00+

IR026A, IR02H420, IR-02T Picture

IR026A, IR02H420, IR-02T Datasheet download

Five Points

Part Number: IR026A

 

MFG: IR

Package Cooled: SOP-8

D/C: 00+

 

 

 
 
 
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  • IR0012L85

  • Vendor: Sanken Qty: 2100  Adddate: 2024-11-24
  • Inquire Now
  • PB GROUP CO.,LTD   China
    Contact: Ms.lindatang   MSN:linda.pb-ic@hotmail.com
    Tel: 86-0755-83753631
    Fax: 86-0755-61281270
    (4)

About IR01H(D)214

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Datasheet: IR01H(D)214

File Size: 58941 KB

Manufacturer:

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IR02H420 Suppliers

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  • IR0012L85

  • Vendor: Sanken Qty: 2100  Adddate: 2024-11-24
  • Inquire Now
  • PB GROUP CO.,LTD   China
    Contact: Ms.lindatang   MSN:linda.pb-ic@hotmail.com
    Tel: 86-0755-83753631
    Fax: 86-0755-61281270
    (4)

About IR02H420

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Datasheet: IR02H420

File Size: 156460 KB

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About IR-B2

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Datasheet: IR-B2

File Size: 30326 KB

Manufacturer: Infineon

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IR02H420 General Description

    The  IR02H420 is a high voltage, high speed half bridge.  Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs.  The front end features an independent high and low side driver in phase with the logic compatible input signals.  The output  features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half-bridge.  Propagation delays for the high and low side power MOSFETs are matched to simplify use.  The device can operate up to 500 volts.

IR02H420 Maximum Ratings

  Parameter
Symbol Definition
Min.
Max.
Units
VIN High Voltage Supply
-0.3
500
V
VB High Side Floating Supply Absolute Voltage
-0.3
525
VO Half-Bridge Output Voltage
-0.3
VIN + 0.3
VIH/VIL Logic Input Voltage (HIN & LIN)
-0.3
VCC + 0.3
VCC Low Side and Logic Fixed Supply Voltage
-0.3
25
dv/dt Peak Diode Recovery dv/dt
---
3.5
V/ns
PD Package Power Dissipation @ TA+25ºC
---
2.00
W
RqJA Thermal Resistance, Junction to Ambient
---
60
ºC/W
TJ Junction Temperature
-55
150
ºC
TS Storage Temperature
-55
150
TL Lead Temperature (Soldering, 10 seconds)
---
300

IR02H420 Features

  Output Power MOSFETs in half-bridge configuration
  500V Rated Breakdown Voltage
  High side gate drive designed for bootstrap operation
  Matched propagation delay for both channels
  Independent high and low side output channels
  Undervoltage lockout
 5V Schmitt-triggered input logic
  Half-Bridge output out of phase with HIN

IR02H420 Connection Diagram

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