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IPP04N03LA, IPP04N03LB G, IPP050N06N G

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Info of IPP04N03LA
Info of IPP04N03LB G
Info of IPP050N06N G

IPP04N03LA, IPP04N03LB G, IPP050N06N G Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+

IPP04N03LA, IPP04N03LB G, IPP050N06N G Datasheet download

Five Points

Part Number: IPP04N03LA

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-220

D/C: 08+

Description: MOSFET N-CH 25V 80A TO-220AB

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IPP04N03LA Parameters

Technical/Catalog Information	IPP04N03LA
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds	3877pF @ 15V
Power - Max	107W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 5V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP04N03LA IPP04N03LA IPP04N03LAIN ND IPP04N03LAINND IPP04N03LAIN

IPP04N03LA Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 °C	80	A
Continuous drain current	I_D	T_C=100 °C	80	A
Pulsed drain current	I_D,pulse	T_C=25 °C	385	A
Avalanche energy, single pulse	E_AS	I_D=77 A, R_GS=25 Ω	290	mJ
Reverse diode dv /dt	dv /dt	I_D=80 A, V_DS=20 V, di /dt =200 A/µs, T_j,max=175 °C	6	kV/µs
Gate source voltage	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	107	W
Operating and storage temperature	T_j, T_stg		-55 ... 175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

IPP04N03LA Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

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