Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...
IPP054NE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...
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Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
I D |
T C=25 2) |
100 |
A |
T C=100 |
100 | |||
Pulsed drain current2) |
I D,pulse |
T C=25 |
400 | |
Avalanche energy, single pulse |
EAS |
I D=100 A, RGS=25 |
826 |
mJ |
Reverse diode dv /dt |
dv /dt |
I D=100 A, VDS=68 V, di /dt =100 A/s, T j,max=175 |
6 |
kV/s |
Gate source voltage3) |
VGS |
±20 |
V | |
Power dissipation |
Ptot |
T C=25 |
300 |
W |
Operating and storage temperature |
T j, T stg |
-55 ... 175 |
||
IEC climatic category; DIN IEC 68-1 |
55/175/56 |