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IPP03N03LA

MOSFET N-CH 25V 80A

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SeekIC No. : 00151777 Detail

IPP03N03LA: MOSFET N-CH 25V 80A

IPP03N03LA Data Sheet

floor Price/Ceiling Price

US $ .74~1.3 / Piece | Get Latest Price
Part Number:
IPP03N03LA
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.3
  • $1.18
  • $1.06
  • $.74
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.4 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 80 A
TC=100 80
Pulsed drain current ID,pulse TC=25 3) 385
Avalanche energy, single pulse EAS ID=80 A, RGS=25 Ω 960 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175 		6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 150 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPP03N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds 7027pF @ 15V
Power - Max150W
PackagingTape & Box (TB)
Gate Charge (Qg) @ Vgs57nC @ 5V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP03N03LA
IPP03N03LA
IPP03N03LAIN ND
IPP03N03LAINND
IPP03N03LAIN



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