MOSFET N-CH 25V 50A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 9.9 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
· The information herein is given to describe certain components and shall not be considered as warranted characteristics.
· Terms of delivery and rights to technical change reserved.
· We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein.
· Infineon Technologies is an approved CECC manufacturer.
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 °C | 80 | A |
TC=100 °C | 80 | A | ||
Pulsed drain current | ID,pulse | TC=25 °C | 385 | A |
Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 290 | mJ |
Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 107 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | IPP06N03LA |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 2653pF @ 15V |
Power - Max | 83W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 22nC @ 5V |
Package / Case | TO-220AB |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPP06N03LA IPP06N03LA IPP06N03LAIN ND IPP06N03LAINND IPP06N03LAIN |