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IPD04N03LAG, IPD04N03LB G, IPD04N03LBG

Table of contents:
Info of IPD04N03LAG
Info of IPD04N03LB G
Info of IPD04N03LBG

IPD04N03LAG, IPD04N03LB G, IPD04N03LBG Selling Leads, Datasheet

MFG:INFINEON Package Cooled:2009+ROHS D/C:30000

IPD04N03LAG, IPD04N03LB G, IPD04N03LBG Picture

IPD04N03LAG, IPD04N03LB G, IPD04N03LBG Datasheet download

Five Points

Part Number: IPD04N03LAG

MFG: INFINEON

Package Cooled: 2009+ROHS

D/C: 30000

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IPD04N03LAG Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25²⁾	50	A
Continuous drain current	I_D	T_C=100	50
Pulsed drain current	I_D,pulse	T_C=25³⁾	350
Avalanche energy, single pulse	E_AS	I_D=9.3 A, R_GS=25	600	mJ
MOSFET dv /dt ruggedness	dv /dt	I_D=30 A, V _DS=20 V, di /dt =200 A/s, T _j,max=175	6	kV/s
Gate source voltage4)	V_GS	static	±20	V
Power dissipation	P_tot	T_C=25	115	W
Operating and storage temperature	T_j, T_stg		-55 ... 175
IEC climatic category; DIN IEC 68-1			55/175/56

IPD04N03LAG Features

• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliant

IPD04N03LBG Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25²⁾	50	A
Continuous drain current	I_D	T_C=100	50
Pulsed drain current	I_D,pulse	T_C=25³⁾	200
Avalanche energy, single pulse	E_AS	I_D=9.3 A, R_GS=25	430	mJ
MOSFET dv /dt ruggedness	dv /dt	I_D=30 A, V _DS=20 V, di /dt =200 A/s, T _j,max=175	6	kV/s
Gate source voltage4)	V_GS	static	±20	V
Power dissipation	P_tot	T_C=25	115	W
Operating and storage temperature	T_j, T_stg		-55 ... 175
IEC climatic category; DIN IEC 68-1			55/175/56

IPD04N03LBG Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliant

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