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IPD040N03LG, IPD04N03, IPD04N03L

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Info of IPD040N03LG
Info of IPD04N03
Info of IPD04N03L

IPD040N03LG, IPD04N03, IPD04N03L Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:7850 D/C:INFINEON

IPD040N03LG, IPD04N03, IPD04N03L Datasheet download

Five Points

Part Number: IPD040N03LG

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 7850

D/C: INFINEON

Description: MOSFET N-CH 30V 90A TO252-3

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IPD040N03LG Parameters

Technical/Catalog Information	IPD040N03LG
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	3900pF @ 15V
Power - Max	79W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD040N03LG IPD040N03LG IPD040N03LGINTR ND IPD040N03LGINTRND IPD040N03LGINTR

IPD04N03L Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 °C	100	A
Continuous drain current	I_D	T_C=100 °C	100	A
Pulsed drain current	I_D,pulse	T_C=25 °C	400	A
Avalanche energy, single pulse	E_AS	I_D=77 A, R_GS=25 Ω	60	mJ
Reverse diode dv /dt	dv /dt	I_D=80 A, V_DS=20 V, di /dt =200 A/µs, T_j,max=175 °C	6	kV/µs
Gate source voltage	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	150	W
Operating and storage temperature	T_j, T_stg		-55 ... 175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

IPD04N03L Features

· N-Channel
· Logic Level
· Low On-Resistance RDS(on)
· Excellent Gate Charge x R_DS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter

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