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IPD05N03LBG

MOSFET N-Channel MOSFET 20-200V

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SeekIC No. : 00163235 Detail

IPD05N03LBG: MOSFET N-Channel MOSFET 20-200V

IPD05N03LBG Data Sheet

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Part Number:
IPD05N03LBG
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 7.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 90 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 7.5 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 50 A
TC=100 50
Pulsed drain current ID,pulse TC=25 3) 350
Avalanche energy, single pulse EAS ID=90 A, RGS=25 Ω 225 mJ
Reverse diode dv /dt dv /dt ID=90 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175 		6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 83 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  



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