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• Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
IPA60R199CP Typical Application
• Hard switching SMPS topologies
IPA60R299CP Parameters
Technical/Catalog Information
IPA60R299CP
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25° C
11A
Rds On (Max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds
1100pF @ 100V
Power - Max
33W
Packaging
Tube
Gate Charge (Qg) @ Vgs
29nC @ 10V
Package / Case
TO-220FP
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IPA60R299CP IPA60R299CP
IPA60R299CP Maximum Ratings
Parameter
Symbol
Conditions
Value
Units
Continuous Drain Current2)
ID
TC=25
11
A
Continuous Drain Current2)
ID
TC=100
7
Continuous Drain Current3)
IDpulse
TC=25
34
Avalanche energy, single pulse
EAS
I D=4.4 A, V DD=50 V
290
mJ
Avalanche energy, repetitive tAR 3)4)
EAR
I D=4.4 A, V DD=50 V
0.44
mJ
Avalanche Current3)4)
IAR
4.4
A
MOSFET dv /dt ruggedness
dv/dt
V DS=0...480 V
50
V/ns
Gate source voltage
V GS
static AC (f >1 Hz)
±20 ±30
V
Power dissipation
P tot
T C=25
33
W
Junction and Storage Temperature Range
TJ, TSTG
-55 ... 150
Mounting torque
M2.5 screws
50
Ncm
IPA60R299CP Features
• Lowest figure-of-merit RONxQg • Ultra low gate charge 6.6 • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
IPA60R299CP Typical Application
• Hard switching SMPS topologies
IPA60R385CP Parameters
Technical/Catalog Information
IPA60R385CP
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25° C
9A
Rds On (Max) @ Id, Vgs
385 mOhm @ 5.2A, 10V
Input Capacitance (Ciss) @ Vds
790pF @ 100V
Power - Max
31W
Packaging
Tube
Gate Charge (Qg) @ Vgs
22nC @ 10V
Package / Case
TO-220
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IPA60R385CP IPA60R385CP
IPA60R385CP Maximum Ratings
Symbol
Parameter
Conditions
Value
Units
ID
Continuous Drain Current2)
TC=25
9
A
ID
Continuous Drain Current2)
TC=100
5.7
IDpulse
Continuous Drain Current3)
TC=25
27
EAS
Avalanche energy, single pulse
I D=3.4 A, V DD=50 V
227
mJ
IAR
Avalanche Current3)4)
3
A
EAR
Avalanche energy, repetitive t AR 3)4)
I D=3.4 A, VDD=50 V
0.3
mJ
dv/dt
MOSFET dv /dt ruggedness
V DS=0...480 V
50
V/ns
V GS
Gate source voltage
static AC (f >1 Hz)
±20 ±30
V
P tot
Power dissipation
T C=25
W
TJ, TSTG
Junction and Storage Temperature Range
Mounting torque
M2.5 screws
50
Ncm
IPA60R385CP Features
• Lowest figure-of-merit RON x QG • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
