IPA60R385CP

MOSFET N-CH 650V 9A TO220-3

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SeekIC No. : 003431221 Detail

IPA60R385CP: MOSFET N-CH 650V 9A TO220-3

floor Price/Ceiling Price

US $ .66~.66 / Piece | Get Latest Price
Part Number:
IPA60R385CP
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10000
  • Unit Price
  • $.66
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) @ Vgs: 22nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 790pF @ 100V
Power - Max: 31W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO-220-FP    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 9A
Power - Max: 31W
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Series: CoolMOS™
Manufacturer: Infineon Technologies
Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Input Capacitance (Ciss) @ Vds: 790pF @ 100V
Supplier Device Package: PG-TO-220-FP


Features:

• Lowest figure-of-merit RON x QG
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant



Specifications

Symbol
Parameter
Conditions
Value
Units
ID
Continuous Drain Current2) TC=25
9
A
ID
Continuous Drain Current2) TC=100
5.7
IDpulse
Continuous Drain Current3) TC=25
27
EAS
Avalanche energy, single pulse I D=3.4 A, V DD=50 V
227
mJ
IAR
Avalanche Current3)4)  
3
A
EAR
Avalanche energy, repetitive t AR 3)4) I D=3.4 A,  VDD=50 V
0.3
mJ
dv/dt
MOSFET dv /dt ruggedness V DS=0...480 V
50
V/ns
V GS
Gate source voltage static
AC (f >1 Hz)
±20
±30
V
P tot
Power dissipation T C=25  
W
TJ, TSTG
Junction and Storage Temperature Range    
Mounting torque

M2.5 screws
50
Ncm



Parameters:

Technical/Catalog InformationIPA60R385CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs385 mOhm @ 5.2A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 100V
Power - Max31W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPA60R385CP
IPA60R385CP



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