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IPA60R199CP

MOSFET COOL MOS PWR TRANS MAX 650V

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IPA60R199CP: MOSFET COOL MOS PWR TRANS MAX 650V

IPA60R199CP Data Sheet

floor Price/Ceiling Price

US $ 1.19~2.53 / Piece | Get Latest Price
Part Number:
IPA60R199CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.53
  • $2.14
  • $2.09
  • $1.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.199 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Continuous Drain Current : 16 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.199 Ohms


Features:

• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant


Application

• Hard switching SMPS topologies


Specifications

Parameter
Symbol
 Conditions
Value
Units
Continuous Drain Current2)
ID
 TC=25
16
A
Continuous Drain Current2)
ID
 TC=100
10
Continuous Drain Current3)
IDpulse
TC=25
51
Avalanche energy, single pulse
EAS
I D=6.6 A, V DD=50 V
436
mJ
Avalanche energy, repetitive tAR 3)4)
EAR
I D=6.6 A, V DD=50 V
0.66
mJ
Avalanche Current3)4)
IAR
6.6
A
MOSFET dv /dt ruggedness
dv/dt
 V DS=0...480 V
50
V/ns
Gate source voltage
V GS
 static
AC (f >1 Hz)
±20
±30
V
Power dissipation
P tot
 T C=25
34
W
Junction and Storage Temperature Range
TJ, TSTG
-55 ... 150

Mounting torque
M2.5 screws
50
Ncm



Parameters:

Technical/Catalog InformationIPA60R199CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs199 mOhm @ 9.9A, 10V
Input Capacitance (Ciss) @ Vds 1520pF @ 100V
Power - Max34W
PackagingTube
Gate Charge (Qg) @ Vgs43nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPA60R199CP
IPA60R199CP



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