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IPA50R520CP, IPA60R125CP, IPA60R165CP

Table of contents:
Info of IPA50R520CP
Info of IPA60R125CP
Info of IPA60R165CP

IPA50R520CP, IPA60R125CP, IPA60R165CP Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:N/A D/C:07+

IPA50R520CP, IPA60R125CP, IPA60R165CP Picture

IPA50R520CP, IPA60R125CP, IPA60R165CP Datasheet download

Five Points

Part Number: IPA50R520CP

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: N/A

D/C: 07+

Description: MOSFET N-CH 650V 21A TO220-3

Price Break

500

Unit Price

.80056

Extended Price

400.28

(All prices are in USD) Prices for reference only

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IPA50R520CP Parameters

Technical/Catalog Information	IPA50R520CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	7.1A
Rds On (Max) @ Id, Vgs	520 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	680pF @ 100V
Power - Max	66W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	TO-220FP
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPA50R520CP IPA50R520CP

IPA60R125CP Parameters

Technical/Catalog Information	IPA60R125CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	125 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 100V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPA60R125CP IPA60R125CP

IPA60R165CP Parameters

Technical/Catalog Information	IPA60R165CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	165 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 100V
Power - Max	34W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPA60R165CP IPA60R165CP

IPA60R165CP Maximum Ratings

Parameter	Symbol	Conditions	Value	Units
Continuous Drain Current2)	I_D	T_C=25	21	A
Continuous Drain Current²⁾	I_D	T_C=100	13
Continuous Drain Current³⁾	I_Dpulse	T_C=25	61
Avalanche energy, single pulse	E_AS	I D=7.9 A, V DD=50 V	522	mJ
Avalanche energy, repetitive tAR ³⁾⁴⁾	E_AR	I D=7.9 A, V DD=50 V	0.79	mJ
Avalanche Current³⁾⁴⁾	I_AR		7.9	A
MOSFET dv /dt ruggedness	d_v/d_t	V DS=0...480 V	50	V/ns
Gate source voltage	V GS	static AC (f >1 Hz)	±20 ±30	V
Power dissipation	P tot	T C=25	34	W
Junction and Storage Temperature Range	T_J, T_STG		-55 ... 150
	Mounting torque	M2.5 screws	50	Ncm

IPA60R165CP Features

• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant

IPA60R165CP Typical Application

• Hard switching SMPS topologies

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