ILD02-214, ILD03N60, ILD1 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:. D/C:06+
ILD02-214, ILD03N60, ILD1 Datasheet download
Part Number: ILD02-214
MFG: INFINEON
Package Cooled: .
D/C: 06+
ILD02-214, ILD03N60, ILD1
- Table of contents:
Info of ILD02-214
Info of ILD03N60
Info of ILD1
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About ILD03N60
PDF/DataSheet Download
Datasheet: ILD03N60
File Size: 338720 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About ILD03N60
PDF/DataSheet Download
Datasheet: ILD03N60
File Size: 338720 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About ILD1
PDF/DataSheet Download
Datasheet: ILD1
File Size: 32954 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
ILD03N60 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit | ||
|
ILA03N60 |
Others | ||||
| Collector-emitter voltage |
VCE |
600 |
V | ||
| DC collector current | TC = 25 TC = 100 |
IC |
3 2.2 |
4.5 3 |
A |
| Pulsed collector current, tp limited by Tjmax, tp < 10 ms |
ICpuls |
9 | |||
| Pulsed collector current, tp limited by Tjmax |
5.5 | ||||
| Diode forward current | TC = 25 TC = 100 |
IF |
4 2.2 |
4 2.5 | |
| Diode pulsed current, tp limited by Tjmax, tp < 10 ms |
IFpuls |
9 | |||
| Diode pulsed current, tp limited by Tjmax |
5.5 | ||||
| Avalanche energy, single pulse IC=0.4A, VCE=50V |
EAS |
0.32 |
mJ | ||
| Gate-emitter voltage |
VGE |
±30 |
V | ||
| Reverse diode dv/dt IC 3A, VCE 450V, Tjmax 150 |
dv/dt |
11 |
V/ns | ||
| Power dissipation (TC = 25) |
Ptot |
16.5 |
27 |
W | |
| Operating junction and storage temperature |
Tstg |
-55...+150 |
|||
| Soldering temperature for 10 s (according to JEDEC J-STA-020A) |
Ts |
D-Pak 255 Others 220 | |||
ILD03N60 Features
• New high voltage technology designed for ZVS-switching in lamp ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
ILD1 General Description
Optocoupler, Phototransistor Output (Dual, Quad Channel)
ILD1 Maximum Ratings
Reverse Voltage ..................................6 V
Forward Current .............................60 mA
Surge Current...................................2.5 A
Power Dissipation........................100 mW
Derate Linearly from 25°C... 1.3 mW/°C
Forward Current .............................60 mA
Surge Current...................................2.5 A
Power Dissipation........................100 mW
Derate Linearly from 25°C... 1.3 mW/°C
ILD1 Features
• Current Transfer Ratio at IF=10 mA
• ILD/Q1, 20% Min.
• ILD/Q2, 100% Min.
• ILD/Q5, 50% Min.
• High Collector-Emitter Voltage
• ILD/Q1: BVCEO=50 V
• ILD/Q2, ILD/Q5: BVCEO=70 V
• Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VACRMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
• ILD/Q1, 20% Min.
• ILD/Q2, 100% Min.
• ILD/Q5, 50% Min.
• High Collector-Emitter Voltage
• ILD/Q1: BVCEO=50 V
• ILD/Q2, ILD/Q5: BVCEO=70 V
• Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VACRMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
ILD1 Connection Diagram
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