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ILD03N60

Features: • New high voltage technology designed for ZVS-switching in lamp ballasts• IGBT with integrated reverse diode• 4A current rating for reverse diode• Up to 10 times lower gate capacitance than MOSFET• Avalanche rated• 150°C operating temperature• F...

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ILD03N60: Features: • New high voltage technology designed for ZVS-switching in lamp ballasts• IGBT with integrated reverse diode• 4A current rating for reverse diode• Up to 10 times l...

ILD03N60 Data Sheet

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Part Number:
ILD03N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/17

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Product Details

Description



Features:

• New high voltage technology designed for ZVS-switching in lamp ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)


Specifications

Parameter
Symbol
Value
Unit
ILA03N60
Others
Collector-emitter voltage
VCE
600
V
DC collector current TC = 25
TC = 100
IC
3
2.2
4.5
3
A
Pulsed collector current, tp limited by Tjmax, tp < 10 ms
ICpuls
9
Pulsed collector current, tp limited by Tjmax
5.5
Diode forward current TC = 25
TC = 100
IF
4
2.2
4
2.5
Diode pulsed current, tp limited by Tjmax, tp < 10 ms
IFpuls
9
Diode pulsed current, tp limited by Tjmax
5.5
Avalanche energy, single pulse
IC=0.4A, VCE=50V
EAS
0.32
mJ
Gate-emitter voltage
VGE
±30
V
Reverse diode dv/dt
IC 3A, VCE 450V, Tjmax 150
dv/dt
11
V/ns
Power dissipation (TC = 25)
Ptot
16.5
27
W
Operating junction and storage temperature
Tstg
-55...+150
Soldering temperature
for 10 s (according to JEDEC J-STA-020A)
Ts
D-Pak 255
Others 220



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