ILD217T

Transistor Output Optocouplers Phototransistor Out Dual CTR >100%

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SeekIC No. : 0097434 Detail

ILD217T: Transistor Output Optocouplers Phototransistor Out Dual CTR >100%

floor Price/Ceiling Price

US $ .5~.73 / Piece | Get Latest Price
Part Number:
ILD217T
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.73
  • $.67
  • $.58
  • $.5
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/17

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 70 V
Maximum Collector Emitter Saturation Voltage : 0.4 V Isolation Voltage : 4000 Vrms
Current Transfer Ratio : 120 % Maximum Forward Diode Voltage : 1.55 V
Maximum Power Dissipation : 300 mW Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C Package / Case : SOIC-8
Packaging : Reel    

Description

Maximum Collector Current :
Maximum Collector Emitter Saturation Voltage : 0.4 V
Minimum Operating Temperature : - 55 C
Packaging : Reel
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 300 mW
Input Type : DC
Maximum Collector Emitter Voltage : 70 V
Package / Case : SOIC-8
Maximum Forward Diode Voltage : 1.55 V
Isolation Voltage : 4000 Vrms
Current Transfer Ratio : 120 %


Features:

• Two Channel Coupler
• SOIC-8A Surface Mountable Package
• Standard Lead Spacing of .05 "
• Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)
• Isolation Test Voltage, 3000 VRMS
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC





Application

• UL1577, File No. E52744 System Code Y




Pinout

  Connection Diagram

  Connection Diagram




Specifications

Parameter Test condition Symbol Value Unit
Peak reverse voltage VR 6.0 V
Peak pulsed current 1.0 µs, 300 pps 1.0 mA
Continuous forward current per
channel
30 A
Power dissipation Pdiss 50 mW
Derate linearly from 25 °C 0.66 mW/°C





Description

The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by ILD217T while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.

A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.



The ILD217T is designed as one kind of dual channel optocoupler that can be used for high density applications with limited space. And this device has some points of features: (1)Two Channel Coupler; (2)SOIC-8A Surface Mountable Package; (3)Standard Lead Spacing of .05 "; (4)Available only on Tape and Reel Option (Conforms to EIA Standard 481-2); (5)Isolation Test Voltage, 3000 VRMS; (6)Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering; (7)Lead-free component.

The absolute maximum ratings of the ILD217T can be summarized as:(1)Peak reverse voltage: 6.0 V;(2)Peak pulsed current: 1.0 A;(3)Continuous forward current per channel: 30 mA;(4)Power dissipation: 50 mW;(5)Derate linearly from 25 °C: 0.66 mW/°C;(6)Collector-emitter breakdown voltage: 70 V;(7)Emitter-collector breakdown voltage: 7.0 V;(8)Power dissipation per channel: 125 mW;(9)Derate linearly from 25 °C: 1.67 mW/°C.etc.

The electrical characteristics of ILD217T can be summarized as:(1)Forward voltage: 1.2 to 1.55 V;(2)Reverse current: 0.1 to 100 A;(3)input capacitance: 25 pF;(4)Collector-emitter breakdown voltage: 70 V;(5)Emitter-collector breakdown voltage: 7.0 V;(6)Collector-emitter leakage current: 5.0 to 50 nA;(7)Collector-emitter capacitance: 10 pF;(8)Collector-emitter saturation voltage: 0.4 V;(9)Capacitance (input-output): 0.5 pF.etc. If you want to know more information about the ILD217T, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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