HUF76129D3T, HUF76129P3, HUF76129S Selling Leads, Datasheet
MFG:FAIRCHIL Package Cooled:TO-252 D/C:08+
HUF76129D3T, HUF76129P3, HUF76129S Datasheet download
Part Number: HUF76129D3T
MFG: FAIRCHIL
Package Cooled: TO-252
D/C: 08+
HUF76129D3T, HUF76129P3, HUF76129S
- Table of contents:
Info of HUF76129D3T
Info of HUF76129P3
Info of HUF76129S
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About HUF75229P3
PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About HUF76129P3
PDF/DataSheet Download
Datasheet: HUF76129P3
File Size: 111485 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About HUF76129S3S
PDF/DataSheet Download
Datasheet: HUF76129S3S
File Size: 111485 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
HUF76129P3 General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA76129.
Formerly developmental type TA76129.
HUF76129P3 Maximum Ratings
| Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS | 30 | V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR | 30 | V |
| Gate to Source Voltage . . . . . . . . . . . . VGS | ±16 | V |
| Drain Current | ||
| Continuous (TC= 25, VGS = 10V) (Figure 2) . . . . ID |
56 | A |
| Continuous (TC= 100, VGS = 5V) . . . . . . . . . . ID | 35 | A |
| Continuous (TC= 100, VGS = 4.5V) . . . . . . . . ID | 34 | A |
| Pulsed Drain Current . . . . . . .. . . . . IDM | Figure 4 | |
| Pulsed Avalanche Rating. . . . . . . . . . EAS | Figures 6, 17, 18 | |
| Power Dissipation(Note 2) . . . . . . . . .. . . . PD |
105 | W |
| Derate Above 25 . . . . . . . . . . . . . . . . . . | 0.83 | W/ |
| Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG | -40 to 150 | |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL | 300 | |
| Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg | 260 |
HUF76129P3 Features
• Logic Level Gate Drive
• 56A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.016W
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• 56A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.016W
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
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