HUF75307P3, HUF75307S, HUF75307T3S136 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
HUF75307P3, HUF75307S, HUF75307T3S136 Datasheet download
Part Number: HUF75307P3
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
MFG:Fairchild Package Cooled:N/A D/C:09+
HUF75307P3, HUF75307S, HUF75307T3S136 Datasheet download
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
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Datasheet: HUF75307P3
File Size: 209703 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HUF75229P3
File Size: 138990 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
UNITS | ||||
Drain to Source Voltage (Note 1) |
VDSS |
55 |
V | |
Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
55 |
V | |
Gate to Source Voltage |
VGS |
±20 |
V | |
Drain Current Continuous (Figure 2). |
ID |
15 |
A | |
Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
||
Pulsed Avalanche Rating |
EAS |
Figures 6, 14, 15 |
||
Power Dissipation |
PD |
45 |
W | |
Derate Above 25 |
0.3 |
W/ | ||
Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
||
Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |