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HUF75307S3S, HUF75307-T, HUF75307T3ST

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Info of HUF75307S3S
Info of HUF75307-T
Info of HUF75307T3ST

HUF75307S3S, HUF75307-T, HUF75307T3ST Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

HUF75307S3S, HUF75307-T, HUF75307T3ST Picture

HUF75307S3S, HUF75307-T, HUF75307T3ST Datasheet download

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Part Number: HUF75307S3S

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CHAN 55V 2.6A SOT-223

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HUF75307T3ST Parameters

Technical/Catalog Information	HUF75307T3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	2.6A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 20V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75307T3ST HUF75307T3ST

HUF75307T3ST General Description

This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

HUF75307T3ST Maximum Ratings

				UNITS
Drain to Source Voltage (Note 1)		V_DSS	55	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)		V_DGR	55	V
Gate to Source Voltage		V_GS	±20	V
Drain Current Continuous (Figure 2).(Note 2).		I_D	2.6	A
Drain Current Pulsed Drain Current		I_DM	Figure 5
Pulsed Avalanche Rating		E_AS	Figures 6, 14, 15
Power Dissipation		P_D	1.1	W
Derate Above 25			9.08	W/
Operating and Storage Temperature		T_J,T_STG	-55 to 150
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	T_L	300
Maximum Temperature for Soldering	Package Body for 10s, See Techbrief 334	T_pkg	260

NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

HUF75307T3ST Features

• 2.6A, 55V
• Ultra Low On-Resistance, r_DS(ON) = 0.090
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE™ Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

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