Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Tube
Continuous Drain Current
: 20 A
Drain-Source Breakdown Voltage
: 55 V
Resistance Drain-Source RDS (on)
: 0.036 Ohms
Package / Case
: TO-252AA
Features: • 20A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER© Models
- Thermal Impedance SPICE and SABER Models Available on the WEB at: www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| |
|
|
UNITS |
| Drain to Source Voltage (Note 1) |
VDSS |
55 |
V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
55 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Drain Current Continuous (Figure 2) |
ID |
20 |
A |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
|
| Pulsed Avalanche Rating |
EAS |
Figures 6, 14, 15 |
|
| Power Dissipation |
PD |
93 |
W |
| Derate Above 25 |
|
0.625 |
W/ |
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
|
| Maximum Temperature for Soldering |
Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
|
NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Description
These N-Channel power MOSFETs HUF75321D3S are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75321D3S was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Parameters: | Technical/Catalog Information | HUF75321D3S |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 680pF @ 25V |
| Power - Max | 93W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 44nC @ 20V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75321D3S
HUF75321D3S
|
HUF75321D3S Data Sheet
