MOSFET 20a 55V N-Channel UltraFET
HUFA75329D3S: MOSFET 20a 55V N-Channel UltraFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.026 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Tube |
These N-Channel power MOSFETs HUFA75329D3S are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75329D3S was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329.
Technical/Catalog Information | HUFA75329D3S |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 20A, 10V |
Input Capacitance (Ciss) @ Vds | 1060pF @ 25V |
Power - Max | 128W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 65nC @ 20V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUFA75329D3S HUFA75329D3S |